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ED14R126-12AMBTEL Scheda tecnica(PDF) 33 Page - Eorex Corporation

Il numero della parte ED14R126-12AMBTEL
Spiegazioni elettronici  ED382R517-2G4SA-H9R is eorex Registered DDR3 SDRAM DIMMs
PDF  51 Pages
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Produttore elettronici  EOREX [Eorex Corporation]
Homepage  http://www.eorex.com
Logo EOREX - Eorex Corporation

ED14R126-12AMBTEL Scheda tecnica(HTML) 33 Page - Eorex Corporation

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DDR3-1333 Speed Bins
For specific Notes See "Speed Bin Table Notes" on page 37.
eorex
ED382R517-2G4SA-H9R
33
www.eorex.com
Speed Bin
DDR3-1333H
Unit
Note
CL - nRCD - nRP
9-9-9
Parameter
Symbol
min
max
Internal read
command to first data
tAA
13.5
(13.125)5,10
20
ns
ACT to internal read or
write delay time
tRCD
13.5
(13.125)5,10
—
ns
PRE command period
tRP
13.5
(13.125)5,10
—
ns
ACT to ACT or REF
command period
tRC
49.5
(49.125)5,10
—
ns
ACT to PRE command
period
tRAS
36
9 * tREFI
ns
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
ns
1,2,3,7
CWL = 6
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 7
tCK(AVG)
Reserved
ns
4
CL = 7
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1,2,3,4,7
(Optional)5,10
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 8
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
< 2.5
ns
1,2,3,7
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 9
CWL = 5, 6 tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3,4
CL = 10
CWL = 5, 6 tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3
(Optional)
ns
5
Supported CL Settings
6, 7, 8, 9, 10
nCK
Supported CWL Settings
5, 6, 7
nCK



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