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STM32F334C8U6TR Scheda tecnica(PDF) 69 Page - STMicroelectronics

Il numero della parte STM32F334C8U6TR
Spiegazioni elettronici  Arm®Cortex®-M4 32b MCUFPU,up to 64KB Flash,16KB SRAM, 2 ADCs,3 DACs,3 comp.,op-amp, 217ps 10-ch (HRTIM1)
PDF  125 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F334C8U6TR Scheda tecnica(HTML) 69 Page - STMicroelectronics

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STM32F334x4 STM32F334x6 STM32F334x8
Electrical characteristics
103
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 17). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 17. Typical application with an 8 MHz crystal
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 39. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins to minimize output distortion and startup stabilization time. Refer to the
crystal resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 39. LSE oscillator characteristics (fLSE = 32.768 kHz)
Symbol
Parameter
Conditions(1)
Min.(2)
Typ. Max.(2)
Unit
IDD
LSE current consumption
LSEDRV[1:0]=00
lower driving capability
-0.5
0.9
µA
LSEDRV[1:0]=10
medium low driving
capability
--
1
LSEDRV[1:0]=01
medium high-driving
capability
--
1.3
LSEDRV[1:0]=11
higher-driving capability
--
1.6
MS19876V1
(1)
OSC_IN
OSC_OUT
RF
Bias
controlled
gain
fHSE
REXT
8 MHz
resonator
Resonator with integrated
capacitors
CL1
CL2



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