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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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FTK3909L Scheda tecnica(PDF) 1 Page - First Silicon Co., Ltd |
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FTK3909L Scheda tecnica(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  30V P-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (TC=25℃) -5.1 A Drain Current – Continuous (TC=100℃) -3.2 A IDM Drain Current – Pulsed 1 -20.4 A EAS Single Pulse Avalanche Energy 2 39.2 mJ IAS Single Pulse Avalanche Current 2 28 A PD Power Dissipation (TC=25℃) 1.56 W Power Dissipation – Derate above 25℃ 0.012 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 80 ℃/W BVDSS RDSON ID -30V 32m Ω -5.1A These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. -30V,-5.1A, RDS(ON) =32m Ω@VGS = -10V Fast switching Green Device Available Suit for -4.5V Gate Drive Applications General Description Features Applications Notebook Load Switch Battery Protection Hand-held Instruments S D G S D D G D D Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics 1 6 3 4 SOT-23-6 Pin Configuration SEMICONDUCTOR TECHNICAL DATA FTK3909L 2018. 12. 06 1/5 Revision No : 0 |
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