Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

FTK3909L Scheda tecnica(PDF) 2 Page - First Silicon Co., Ltd

Il numero della parte FTK3909L
Spiegazioni elettronici  30V P-Channel MOSFETs
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  FS [First Silicon Co., Ltd]
Homepage  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3909L Scheda tecnica(HTML) 2 Page - First Silicon Co., Ltd

  FTK3909L Datasheet HTML 1Page - First Silicon Co., Ltd FTK3909L Datasheet HTML 2Page - First Silicon Co., Ltd FTK3909L Datasheet HTML 3Page - First Silicon Co., Ltd FTK3909L Datasheet HTML 4Page - First Silicon Co., Ltd FTK3909L Datasheet HTML 5Page - First Silicon Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
30V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=
-250uA
-30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=
-1mA
---
-0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=
-30V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=
-24V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=
-10V , ID=-4A
---
27
32
mΩ
VGS=
-4.5V , ID=-2A
---
38
46
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =
-250uA
-1.2
-1.6
-2.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
4
---
mV/℃
gfs
Forward Transconductance
VDS=
-10V , ID=-3A
---
9
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=
-15V , VGS=-4.5V , ID=-5A
---
8
15
nC
Qgs
Gate-Source Charge2 , 3
---
3.3
6
Qgd
Gate-Drain Charge2 , 3
---
2.3
5
Td(on)
Turn-On Delay Time2 , 3
VDD=
-15V , VGS=-10V , RG=6Ω
ID=
-1A
---
4.6
9
ns
Tr
Rise Time2 , 3
---
14
26
Td(off)
Turn-Off Delay Time2 , 3
---
34
58
Tf
Fall Time2 , 3
---
18
35
Ciss
Input Capacitance
VDS=
-15V , VGS=0V , F=1MHz
---
757
1280
pF
Coss
Output Capacitance
---
122
210
Crss
Reverse Transfer Capacitance
---
88
175
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-5.1
A
ISM
Pulsed Source Current
---
---
-10.2
A
VSD
Diode Forward Voltage
VGS=0V , IS=
-1A , TJ=25℃
---
---
-1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
3.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
FTK3909L
2018. 12. 06
2/5
Revision No : 0



Html Pages

1 2 3 4 5


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com