UT4822L-S08-R datasheet(4/9 Pages) VBSEMI

Il numero della parte	UT4822L-S08-R

Spiegazioni elettronici	Dual N-Channel 30 V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Produttore elettronici	VBSEMI [VBsemi Electronics Co.,Ltd]

Homepage	www.VBsemi.com

Logo

4 / 9 page

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

ID = 250 µA

ID =5mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

012

345

910

TJ = 25 °C

ID = 8 A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

0.01

0.1

1ms

10 ms

0.1

TA = 25 °C

Single Pulse

Limited byRDS(on)*

10 s

BVDSS Limited

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

UT4822L-S08-R

UT4822L-S08-R Scheda tecnica(PDF) 4 Page - VBsemi Electronics Co.,Ltd

UT4822L-S08-R Scheda tecnica(HTML) 4 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

Scheda tecnica Scarica

Link URL