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UT4822L-S08-R Scheda tecnica(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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UT4822L-S08-R Scheda tecnica(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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1 / 9 page  Dual N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) 30 0.016 at VGS = 10 V 8.5 7.1 0.020 at VGS = 4.5 V 7.6 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 8.5 A TC = 70 °C 7.5 TA = 25 °C 7.2b, c TA = 70 °C 5.9b, c Pulsed Drain Current IDM 30 Source-Drain Current Diode Current TC = 25 °C IS 2.8 TA = 25 °C 1.8b, c Pulsed Source-Drain Current ISM 30 Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5 Maximum Power Dissipation TC = 25 °C PD 3.1 W TC = 70 °C 2.0 TA = 25 °C 2.0b, c TA = 70 °C 1.25b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 52 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 30 40 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UT4822L-S08-R 1 |
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