TSU112IYQ3T datasheet(7/32 Pages) STMICROELECTRONICS

7 / 32 page

Symbol

Parameter

Conditions

Min. Typ. Max.

Unit

Avd

Large signal voltage gain, Vout = 0.2 V to

(VCC+) - 0.2 V

RL = 100 kΩ, -40 °C < T< 125 °C

VOH

High-level output voltage, (drop from VCC+)

RL = 10 kΩ, T = 25 °C

RL = 10 kΩ, -40 °C < T< 125 °C

VOL

Low-level output voltage

RL = 10 kΩ, T = 25°C

RL = 10 kΩ, -40 °C < T< 125 °C

Iout

Output sink current, Vout = VCC , VΙD = -200 mV

T = 25 °C

-40 °C < T< 125 °C

Output source current, Vout = 0 V, VΙD = 200 mV

T = 25 °C

-40 °C < T< 125 °C

ICC

Supply current (per channel), no load, Vout = VCC/2

T = 25 °C

1000 1400

-40 °C < T< 125 °C

2000

AC performance

GBP

Gain bandwidth product

RL = 1 MΩ, CL = 60 pF

kHz

Unity gain frequency

Φm

Phase margin

degrees

Gain margin

SRp

Slew rate (10 % to 90 %)

RL = 1 MΩ, CL = 60 pF,

Vout = 0.3 V to (VCC+) - 0.3 V

0.9

1.9

V/ms

SRn

Slew rate (10 % to 90 %)

RL = 1 MΩ, CL = 60 pF,

Vout = 0.3 V to (VCC+) - 0.3 V

1.5

3.1

V/ms

Equivalent input noise voltage

f = 100 Hz

220

nV/√Hz

ʃen

Low-frequency, peak-to-peak input noise

Bandwidth: f = 0.1 to 10 Hz

4.6

µVpp

trec P

Overload recovery time (from positive rail)

100 mV from rail in comparator,

RL = 100 kΩ,

VΙD = ±1 V -40 °C < T< 125 °C

650

µs

trecN

Overload recovery time (from negative rail)

100 mV from rail in comparator,

RL = 100 kΩ,

VΙD = ±1 V, -40 °C < T< 125 °C

1300

µs

1. Guaranteed by design

TSU112IY

Electrical characteristics

DS13616 - Rev 1

page 7/32

TSU112IYQ3T Scheda tecnica(PDF) 7 Page - STMicroelectronics

TSU112IYQ3T Scheda tecnica(HTML) 7 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

Scheda tecnica Scarica

Link URL