TSU112IYQ3T datasheet(4/32 Pages) STMICROELECTRONICS

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Electrical characteristics

Table 3. Electrical characteristics at (VCC+) = 1.8 V with (VCC- ) = 0 V, Vicm = VCC/2, Tamb = 25 °C, and RL = 1 MΩ

connected to VCC/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

T = 25 °C

150

µV

-40 °C < T< 125 °C

400

ΔVio/ΔT

Input offset voltage drift

-40 °C < T< 125 °C

2.5

μV/°C

Iio

Input offset current (1)

T = 25 °C

-40 °C < T< 125 °C

Iib

Input bias current (1)

T = 25 °C

-40 °C < T< 125 °C

CMR

Common mode rejection ratio,

20 log (ΔVicm/ΔVio),

Vicm = 0 to 1.8 V

T = 25 °C

-40 °C < T< 125 °C

Avd

Large signal voltage gain,

Vout = 0.2 V to (VCC+) - 0.2 V

RL = 100 kΩ, T = 25 °C

120

RL = 100 kΩ,

-40 °C < T< 125 °C

VOH

High-level output voltage,

(drop from VCC+)

RL = 10 kΩ, T = 25 °C

RL = 10 kΩ,

-40 °C < T< 125 °C

VOL

Low-level output voltage

RL = 10 kΩ, T = 25 °C

RL = 10 kΩ,

-40 °C < T< 125 °C

Iout

Output sink current,

Vout = VCC ,

VΙD = -200 mV

T = 25 °C

2.8

-40 °C < T< 85 °C

1.5

Output source current,

Vout = 0 V,

VΙD = 200 mV

T = 25 °C

-40 °C < T< 125 °C

1.5

ICC

Supply current (per channel),

no load,

Vout = VCC/2

T = 25 °C

840

1300

-40 °C < T< 125 °C

1580

AC performance

GBP

Gain bandwidth product

RL = 1 MΩ, CL = 60 pF

kHz

Unity gain frequency

5.5

Φm

Phase margin

degrees

Gain margin

SRp

Slew rate (10 % to 90 %)

RL = 1 MΩ, CL = 60 pF,

Vout = 0.3 V to (VCC+) - 0.3 V

0.8

1.8

V/ms

TSU112IY

Electrical characteristics

DS13616 - Rev 1

page 4/32

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