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ACE25AB400GFMLTH Scheda tecnica(PDF) 11 Page - ACE Technology Co., LTD.

Il numero della parte ACE25AB400GFMLTH
Spiegazioni elettronici  Serial NOR Flash Memory 4M bits 3.0V Dual I/O Serial Flash Memory with 4KB Uniform Sector
PDF  37 Pages
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Produttore elettronici  ACE [ACE Technology Co., LTD.]
Homepage  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE25AB400GFMLTH Scheda tecnica(HTML) 11 Page - ACE Technology Co., LTD.

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ACE25AB400G
Serial NOR Flash Memory 4M bits 3.0V Dual I/O Serial Flash Memory with 4KB Uniform Sector
VER 1.1
11
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect
(BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1.0.
The Status Register Write Disable (SRWD) bit is a non-volatile One Time Program(OTP) bit, the Write
Status Register (WRSR) command allows the user to set the Status Register Write Disable (SRWD) bit to
1. The Status Register Write Disable (SRWD) bit allow the device to be put in another Software Protected
Mode. Once the SRWD bit is set to 1, the Write Status Register (WRSR) command is not executed, and
the Block Protect bits (BP1, BP0) are read only.
Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being
latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO,
each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte
addressed can be at any location. The address is automatically incremented to the next higher address
after each byte of data is shifted out. Therefore, the whole memory can be read with a single Read Data
Bytes (READ) command. During an Erase, Program or Write cycle, Read Data Byte (READ) command
will be rejected without affecting the cycle in progress.
Figure5. Write Status Register Sequence Diagram
Figure6. Read Data Bytes Sequence Diagram



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