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MCP6476T Scheda tecnica(PDF) 2 Page - Microchip Technology |
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MCP6476T Scheda tecnica(HTML) 2 Page - Microchip Technology |
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2 / 46 page ![]() MCP6476/6R/6U/7/9 DS20006419B-page 2 2020-2021 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings† VDD – VSS .....................................................................................................................................................................6V Current at Analog Input Pins (VIN+, VIN-) ................................................................................................................±5 mA Analog Inputs (VIN+, VIN-)††..................................................................................................... VSS – 0.5V to VDD +0.5V Difference Input Voltage ................................................................................................................................ |VDD –VSS| Output Short-Circuit Current (Note 1) .............................................................................................................Continuous Storage Temperature...............................................................................................................................-65°C to +150°C Maximum Junction Temperature (TJ) ....................................................................................................................+150°C ESD Protection on All Pins (HBM; CDM; MM) 3kV; 2kV; 300V Note 1: Short-circuit to ground, one amplifier per package. 1.2 Specifications †Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. †† See Section 4.1.2 “Input Voltage Limits”. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA= +25°C, VDD = +1.8V to +5.5V, VSS= GND, VCM =VDD/4, VOUT =VDD/2, VL =VDD/2, RL = 10 k to VL and CL = 30 pF. Parameters Sym. Min. Typ. Max. Units Conditions Input Offset Input Offset Voltage VOS -1.6 — 1.6 mV Input Offset Drift with Temperature VOS/TA —±0.6— µV/°C TA= -40°C to +125°C Power Supply Rejection Ratio PSRR 80 95 — dB Input Bias Current and Impedance Input Bias Current IB —±1— pA —19— pA TA = +85°C — 200 — pA TA = +125°C Input Offset Current IOS —±1— pA Common-Mode Input Impedance ZCM —1013||6 — ||pF Differential Input Impedance ZDIFF —1013||1 — |pF |
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