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S1DBH Scheda tecnica(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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S1DBH Scheda tecnica(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page ![]() S1ABH – S1MBH Taiwan Semiconductor 2 Version: A2102 THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 30 °C/W ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage (1) IF = 1A,TJ = 25°C VF - 1.1 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 50 µA Junction capacitance 1MHz, VR = 4.0V CJ 12 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING S1xBH DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. "x" defines voltage from 50V(S1ABH) to 1000V(S1MBH) |
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