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S1DBH Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Il numero della parte S1DBH
Spiegazioni elettronici  1A, 50V - 1000V Surface Mount Rectifier
PDF  6 Pages
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Produttore elettronici  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

S1DBH Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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S1ABH
– S1MBH
Taiwan Semiconductor
1
Version: A2102
1A, 50V - 1000V Surface Mount Rectifier
FEATURES
● AEC-Q101 qualified
● Glass passivated chip junction
● Ideal for automated placement
● Low forward voltage drop
● High surge current capability
● Moisture sensitivity level: level 1, per J-STD-020
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter
● Automotive application
● Car lighting
● Snubber
● Freewheeling application
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Indicated by cathode band
● Weight: 0.090g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF
1
A
VRRM
50 - 1000
V
IFSM
30
A
TJ MAX
150
°C
Package
DO-214AA (SMB)
Configuration
Single die
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
S1
ABH
S1
BBH
S1
DBH
S1
GBH
S1
JBH
S1
KBH
S1
MBH
UNIT
Marking code on the device
S1
AB
S1
BB
S1
DB
S1
GB
S1
JB
S1
KB
S1
MB
Repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Reverse voltage, total rms value
VR(RMS)
35
70
140
280
420
560
700
V
Forward current
IF
1
A
Surge peak forward current, 8.3ms
single half sine-wave superimposed
on rated load
IFSM
30
A
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C


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