VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Page 4

G52363-0, Rev 2.1

04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

Figure 2: Pad Assignments

Table 3: Pad Coordinates

Signal

Name

Pad

Number

Coordinates (µm)

Description

X

Y

VGND

1

55

943.6

Ground

CLOP

2

55

1093.6

Data output, true (with reference to incident light)

CLON

3

780

1093.6

Data output, complement (with reference to incident light)

VGND

4

780

943.6

Ground

VGND

5

596.7

61.4

Ground

VDD

6

244.2

61.4

Power Supply

VSC7807

Die Size:

835

µm x 1481µm (32.9mils x 58.3mils)

Die Thickness:

635

µm (26mils)

Pad Sizes:

108

µm x 108µm (4.3mils x 4.3mils)

244

µm x 108µm (9.6mils x 4.3mils)

Pad Passivation Openings: 86

µm x 86µm (3.4mils x 3.4mils)

223

µm x 86µm (8.8mils x 3.4mils)

Scribe Size:

157

µm (6.2mils)

Pad 4

VGND

Pad 5

VGND

Pad 6

VDD

835

µm

(32.9mils)

1481

µm (58.3mils)

157

µm

(6.2mils)

Pad 3

CLON

Pad 1

VGND

Pad 2

CLOP