VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Information

VSC7807

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Page 2

G52363-0, Rev 2.1

04/05/01

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-

cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.

Symbol

Parameters

Min

Max

Units

Conditions

Supply Voltage

3.0

3.3

3.6

V

Supply Current

-

-

40

mA

PSRR

Power Supply Rejection Ratio

-

-10

-

dB

Frequencies up to 40MHz.

Use external filter to get PSRR

λ

Wavelength

700

840

850

nm

Low Frequency Cutoff

-

1.0

2.5

MHz

BW

Optical Modulation Bandwidth

-

1300

-

MHz

-3dB, P = -15dBm

S

Sensitivity

-

20

-

dBm

Single-Ended Output Impedance

-

25

-

Ω

Differential Output Voltage

0.2

-

-

V

P = -5 dBm,

Differential Responsivity

1.6

2.0

-

mV/

µW

At 50MHz

Output Bias Voltage

1.0

-

-

V

∆V

DC

Bias Offset Voltage

-

-

200

mV

Input Noise Equivalent Power

-

1

2.2

µW rms

P = 0mW

Output Noise Voltage

-

-

1.25

mV rms

P = 0mW

DCD

Duty Cycle Distortion

-

-

4.5

%

P = -5dBm

Output Drive Current

2.0

2.6

-

mA

P = -5dBm

PDJ

Pattern Dependent Jitter

-

-

40

ps

P = -5dBm

+/-10% Voltage Window

Optically Active Area

-

70

-

µm

Diameter

PPJ

PP Jitter

-

190

200

ps

P = -5dBm

Rise Time

-

-

200

ps

20% to 80% P = -5dBm

Fall Time

-

-

200

ps

20% to 80% P = -5dBm