PV6D2DA datasheet(2/4 Pages) NIKOSEM

2 / 4 page

L-10-5

Dual N-Channel Enhancement Mode

Field Effect Transistor

PV6D2DA

SOP-8

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.1

ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

1.3

1.79

2.3

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 40V, VGS = 0V

A

VDS = 40V, VGS = 0V, TJ = 55 ° C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 6.4A

mΩ

VGS =10V, ID = 6.4A

19.5

Forward Transconductance

gfs

VDS = 5V, ID = 6.4A

DYNAMIC

5,6

Input Capacitance

Ciss

VGS = 0V, VDS = 20V, f = 1MHz

435

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

4.2

Total Gate Charge

Qg(VGS=10V)

VDS = 20V , ID = 6.4A

7.6

9.5

11.4

Qg(VGS=4.5V)

4.2

5.2

6.2

Gate-Source Charge

Qgs

1.3

1.6

Gate-Drain Charge

Qgd

1.8

4.2

Turn-On Delay Time

td(on)

VDS = 20V ,

ID  6.4A, VGS = 10V, RGEN =6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

101

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)

Continuous Current

1.6

Forward Voltage

VSD

IF = 6.4A, VGS = 0V

1.3

Diode Reverse Recovery Time

trr

IF= 6.4A, dI/dt=100A/μs

5.1

Diode Reverse Recovery Charge

Qrr

1.6

4Pulse test : Pulse Width

 300 sec, Duty Cycle  2%.

5Independent of operating temperature.

6Guaranteed by design, not subject to production testing.

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