STB30N65DM6AG datasheet(6/15 Pages) STMICROELECTRONICS

Il numero della parte	STB30N65DM6AG

Spiegazioni elettronici	Power MOSFET in a D²PAK package

PDF	15 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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6 / 15 page

Figure 7. Typical capacitance characteristics

GADG220120200825CVR

10 4

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

VDS (V)

CISS

COSS

CRSS

f=1MHz

Figure 8. Normalized gate threshold vs temperature

GADG220120200826VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID =250µA

Figure 9. Normalized on-resistance vs temperature

GADG220120200827RON

2.5

2.0

1.5

1.0

0.5

0.0

-75

-25

125

RDS(on)

(norm.)

TJ (°C)

VGS = 10 V

Figure 10. Typical output capacitance stored energy

GADG220120200830EOS

100 200 300 400 500 600

(uJ)

VDS (V)

EOSS

Figure 11. Normalized breakdown voltage vs temperature

GADG220120200827BDV

1.10

1.05

1.00

0.95

0.90

0.85

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 12. Typical reverse diode forward characteristics

GADG220120200829SDF

1.2

1.1

1.0

0.9

0.8

0.7

0.6

VSD

(V)

ISD (A)

TJ =-50°C

TJ =25°C

TJ =150°C

STB30N65DM6AG

Electrical characteristics

(curves)

DS13770 - Rev 1

page 6/15

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