STB30N65DM6AG datasheet(1/15 Pages) STMICROELECTRONICS

Il numero della parte	STB30N65DM6AG

Spiegazioni elettronici	Power MOSFET in a D²PAK package

PDF	15 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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²

D PAK

1

3

TAB

2

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STB30N65DM6AG

650 V

115 mΩ

28 A

•

AEC-Q101 qualified

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB30N65DM6AG

Product summary

Order code

STB30N65DM6AG

Marking

30N65DM6

Package

D²PAK

Packing

Tape and reel

Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6

Power MOSFET in a D²PAK package

STB30N65DM6AG

Datasheet

DS13770 - Rev 1 - June 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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