1. Product profile

1.1 General description

240 W LDMOS power transistor with enhanced video bandwidth for base station

applications at frequencies from 2110 MHz to 2200 MHz.

[1]

Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;

5 MHz carrier spacing.

1.2 Features and benefits



Excellent ruggedness



Excellent video bandwidth enabling full band operation



High efficiency



Low thermal resistance providing excellent thermal stability



Designed for low memory effects providing excellent pre-distortability



Internally matched for ease of use



Integrated ESD protection



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base stations and multi carrier applications in the

2110 MHz to 2200 MHz frequency range

BLC10G22LS-240PVT

Power LDMOS transistor

Rev. 2 — 24 May 2017

Product data sheet

Table 1.

Typical performance

Test signal

f

(MHz)

(mA)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA

2110 to 2170

1600

28

60

19.7

30

30 [1]