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QPD1016LEVB01 Scheda tecnica(PDF) 2 Page - Qorvo, Inc

Il numero della parte QPD1016LEVB01
Spiegazioni elettronici  DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF  24 Pages
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Produttore elettronici  QORVO [Qorvo, Inc]
Homepage  https://www.qorvo.com/
Logo QORVO - Qorvo, Inc

QPD1016LEVB01 Scheda tecnica(HTML) 2 Page - Qorvo, Inc

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QPD1016L
DC
– 1.7 GHz, 50 V, 500 W GaN RF Transistor
Datasheet Rev. A, September 2020 | Subject to change without notice
- 2 of 23 -
www.qorvo.com
Absolute Maximum Ratings1,2
Parameter
Rating
Units
Breakdown Voltage,BVDG
+145
V
Gate Voltage Range, VG
-7 to +2
V
Drain Current, IDMAX
70
A
Gate Current Range, IG
See page 17
mA
Power Dissipation, PDISS
7142
W
RF Input Power, Pulse, 1.3
GHz, T = 25
 °C2
+45.5
dBm
Mounting Temperature
(30 Seconds)
320 
°C
Storage Temperature
−65 to +150
°C
Notes:
1.
Operation of this device outside the parameter ranges
given above may cause permanent damage.
2.
Pulsed 300 uS PW, 10% DC
Recommended Operating Conditions1
Parameter
Min
Typ
Max Units
Drain Voltage Range, VD
50
V
Drain Bias Current, IDQ
1000
mA
Gate Voltage, VG
–
−2.8
–
V
Notes:
1. Electrical performance is measured under conditions noted
in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Measured Load Pull Performance
– Power Tuned 1,2
Parameter
Typical Values
Units
Frequency, F
1.1
1.2
1.3
1.4
1.5
1.7
GHz
Drain Voltage, VD
50
50
50
50
50
50
V
Drain Bias Current, IDQ
1000
1000
1000
1000
1000
1000
mA
Output Power at 3dB
compression, P3dB
58.8
58.6
58.3
58
57.6
58
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
71.7
69.2
72.2
76.1
69.9
71.2
%
Gain at 3dB compression, G3dB
21.0
20.6
20.9
21.7
21.0
20.6
dB
Notes:
1.
Pulsed, 300 uS Pulse Width, 10% Duty Cycle
2.
Characteristic Impedance, Zo = 3
Ω.
Measured Load Pull Performance
– Efficiency Tuned 1,2
Parameter
Typical Values
Units
Frequency, F
1.1
1.2
1.3
1.4
1.5
1.7
GHz
Drain Voltage, VD
50
50
50
50
50
50
V
Drain Bias Current, IDQ
1000
1000
1000
1000
1000
1000
mA
Output Power at 3dB
compression, P3dB
57.6
57.1
56.4
57.3
56.1
56.7
dBm
Power Added Efficiency at 3dB
compression, PAE3dB
79.2
78.3
77.4
77.8
71.2
73.5
%
Gain at 3dB compression, G3dB
22.2
22.1
22.2
22.3
21.7
21.7
dB
Notes:
1.
Pulsed, 300 uS Pulse Width, 10% Duty Cycle
2.
Characteristic Impedance, Zo = 3
Ω.



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