QPD1016LEVB01 pdf, QPD1016LEVB01 Spiegazioni elettronici, QPD1016LEVB01 Scheda tecnica, QPD1016LEVB01 view ::: ALLDATASHEET :::

Codice articolo simile - QPD1016LEVB01

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
TriQuint Semiconductor	QPD1016	1Mb / 25P	50 V, 500 W GaN RF Transistor
Qorvo, Inc	QPD1016	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018
TriQuint Semiconductor	QPD1016EVB01	1Mb / 25P	50 V, 500 W GaN RF Transistor
Qorvo, Inc	QPD1016EVB01	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Cree, Inc	CGHV40050F	866Kb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev 1.0
TriQuint Semiconductor	QPD1016	1Mb / 25P	50 V, 500 W GaN RF Transistor
Cree, Inc	CGHV40050	2Mb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Qorvo, Inc	TGF2977-SM	2Mb / 28P	DC ??12 GHz, 32 V, 5 W GaN RF Transistor
	TGF2933	4Mb / 24P	DC ??25 GHz, 28 V, 7 W GaN RF Transistor
	TGF2934	3Mb / 24P	DC ??25 GHz, 28 V, 14 W GaN RF Transistor
	QPD1881L	1Mb / 18P	400 W, 50 V, 2.7 ??2.9 GHz, GaN RF Power Transistor
	QPD1016	1Mb / 24P	DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor August 17, 2018
	T1G4020036-FS	1Mb / 18P	DC ??3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor September, 2021
WOLFSPEED, INC.	CGHV40050	2Mb / 11P	50 W, DC - 4.0 GHz, 50 V, GaN HEMT Rev. 2.4, 2022-12-2