STL28N60DM2

Electrical characteristics

DocID026786 Rev 2

5/15

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

-

21

A

Source-drain current

(pulsed)

-

84

A

VSD(3)

Forward on voltage

-

1.5

V

Reverse recovery

time

Test circuit for inductive load

switching and diode recovery

times")

-

140

ns

Reverse recovery

charge

-

0.5

µC

Reverse recovery

current

-

7.4

A

Reverse recovery

time

Figure 16: " Test circuit for

inductive load switching and

diode recovery times")

-

309

ns

Reverse recovery

charge

-

2.6

µC

Reverse recovery

current

-

16.8

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source

breakdown voltage

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.