Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

Preview PDF HTML

STL28N60DM2 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STL28N60DM2
Spiegazioni elettronici  N-channel 600 V, 0.155 typ., 21 A MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL28N60DM2 Scheda tecnica(HTML) 3 Page - STMicroelectronics

  STL28N60DM2 Datasheet HTML 1Page - STMicroelectronics STL28N60DM2 Datasheet HTML 2Page - STMicroelectronics STL28N60DM2 Datasheet HTML 3Page - STMicroelectronics STL28N60DM2 Datasheet HTML 4Page - STMicroelectronics STL28N60DM2 Datasheet HTML 5Page - STMicroelectronics STL28N60DM2 Datasheet HTML 6Page - STMicroelectronics STL28N60DM2 Datasheet HTML 7Page - STMicroelectronics STL28N60DM2 Datasheet HTML 8Page - STMicroelectronics STL28N60DM2 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 15 page
background image
STL28N60DM2
Electrical ratings
DocID026786 Rev 2
3/15
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID(1)
Drain current (continuous) at Tcase = 25 °C
21
A
Drain current (continuous) at Tcase = 100 °C
14
IDM(1)(2)
Drain current (pulsed)
84
A
PTOT(1)
Total dissipation at Tcase = 25 °C
140
W
dv/dt(3)
Peak diode recovery voltage slope
50
V/ns
dv/dt(4)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
Notes:
(1) The value is limited by package.
(2) Pulse width limited by safe operating area.
(3) ISD ≤ 21 A, di/dt ≤ 900 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.
(4) VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.89
°C/W
Rthj-amb(1)
Thermal resistance junction-ambient
45
Notes:
(1) When mounted on a 1-inch² FR-4, 2oz Cu board.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR(1)
Avalanche current, repetitive or not repetitive
4
A
EAS(2)
Single pulse avalanche energy
350
mJ
Notes:
(1) Pulse width limited by Tjmax.
(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com