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STM32G081EB Scheda tecnica(PDF) 55 Page - STMicroelectronics |
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STM32G081EB Scheda tecnica(HTML) 55 Page - STMicroelectronics |
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55 / 136 page ![]() DS12231 Rev 4 55/136 STM32G081xB Electrical characteristics 108 5.1.7 Current consumption measurement 5.2 Absolute maximum ratings Stresses above the absolute maximum ratings listed in Table 18, Table 19 and Table 20 may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. All voltages are defined with respect to VSS. Figure 14. Current consumption measurement scheme MSv47901V1 IDDVBAT VBAT IDD VDD (VDDA) VBAT VDD/VDDA Table 18. Voltage characteristics Symbol Ratings Min Max Unit VDD External supply voltage - 0.3 4.0 V VBAT External supply voltage on VBAT pin - 0.3 4.0 VREF+ External voltage on VREF+ pin - 0.3 Min(VDD + 0.4, 4.0) VIN(1) Input voltage on FT_xx pins except FT_c - 0.3 VDD + 4.0(2) Input voltage on FT_c pins - 0.3 5.5 Input voltage on any other pin - 0.3 4.0 1. Refer to Table 19 for the maximum allowed injected current values. 2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled. |
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