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STM32G081EB Scheda tecnica(PDF) 62 Page - STMicroelectronics

Il numero della parte STM32G081EB
Spiegazioni elettronici  Arm® Cortex®-M0 32-bit MCU, 128 KB Flash, 36 KB RAM,4x USART, timers, ADC, DAC, comm. I/Fs, AES, RNG, 1.7-3.6V
PDF  136 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G081EB Scheda tecnica(HTML) 62 Page - STMicroelectronics

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Electrical characteristics
STM32G081xB
62/136
DS12231 Rev 4
Table 26. Typical current consumption in Run and Low-power run modes,
depending on code executed
Symbol
Parameter
Conditions
Typ
Unit
Typ
Unit
General
Code
Fetch
from(1)
25 °C
25 °C
IDD(Run)
Supply
current in
Run mode
Range 1;
fHCLK = fPLLRCLK =
64 MHz;
(2)
Reduced code(3)
Flash
memory
6.4
mA
100
μA/MHz
Coremark
6.2
97
Dhrystone 2.1
5.9
92
Fibonacci
4.6
71
While(1) loop
4.6
71
Reduced code(3)
SRAM
6.2
96
Coremark
6.2
97
Dhrystone 2.1
6.0
93
Fibonacci
6.2
96
While(1) loop
4.8
75
Range 2;
fHCLK = fHSI16 =
16 MHz,
PLL disabled,
(2)
Reduced code(3)
Flash
memory
1.5
94
Coremark
1.5
94
Dhrystone 2.1
1.5
91
Fibonacci
1.1
69
While(1) loop
1.1
69
Reduced code(3)
SRAM
1.5
91
Coremark
1.4
88
Dhrystone 2.1
1.4
84
Fibonacci
1.5
91
While(1) loop
1.1
69
IDD(LPRun)
Supply
current in
Low-power
run mode
fHCLK = fHSI16/8 =
2 MHz;
PLL disabled,
(2)
Reduced code(3)
Flash
memory
380
uA
190
uA/MHz
Coremark
395
198
Dhrystone 2.1
405
203
Fibonacci
385
193
While(1) loop
400
200
Reduced code(3)
SRAM
250
125
Coremark
245
123
Dhrystone 2.1
240
120
Fibonacci
250
125
While(1) loop
230
115
1. Prefetch and cache enabled when fetching from Flash. Code compiled with high optimization for space in SRAM.
2. VDD = 3.3 V, all peripherals disabled, cache enabled, prefetch disabled for execution in Flash and enabled in SRAM
3. Reduced code used for characterization results provided in Table 25.



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