CMBT2907 datasheet(2/4 Pages) CDIL

2 / 4 page

Continental Device India Limited

Data Sheet

Page 2 of 4

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

CMBT2907

CMBT2907A

Collector–base voltage (open emitter)

–VCB0

max. 60

Collector–emitter voltage (open base)

–VCE0

max. 40

Emitter–base voltage (open collector)

–VEB0

max.

5,0

Collector current (d.c.)

–I C

max.

600

Power dissipation up to Tamb = 25 °C

Ptot

max.

250

Storage temperature range

Tstg

–55 to +150

° C

Junction temperature

max.

150

° C

THERMAL RESISTANCE

From junction to ambient in free air

Rth j–a

500

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

CMBT2907

CMBT2907A

IE = 0; –VCB = 50V

–ICB0

<20

IE = 0; –VCB = 50V; Tj = 125° C

–ICB0

<20

µA

–VEB = 0,5 V; –VCE = 30 V

–ICEX

<50

Base current

with reverse biased emitter junction

–VEB = 3V; –VCE = 30V

–IBEX

<50

Saturation voltages

–IC = 150 mA; –lB = 15 mA

–VCEsat

0,4

–VBEsat

1,3

–IC = 500 mA; –lB = 50 mA

–VCEsat

1,6

–VBEsat

2,6

Collector–base breakdown voltage

Open emitter; –IC = 10 µA; IE = 0

–V(BR)CBO >

Collector–emitter breakdown voltage

Open base; –IC = 10 mA; lB: 0–V(BR)CEO >40

Emitter–base breakdown voltage

Open collector; –IE = 10 µA; IC = 0

–V(BR)EBO >

5,0

CMBT2907

CMBT2907A

D.C. current gain

–IC = 0,1 mA; –VCE = 10 V

hFE

>35

–IC = 1 mA; –VCE = 10 V

hFE

100

–IC = 10 mA; –VCE = 10 V

hFE

100

–IC = 150mA; —VCE = 10V

hFE

100 to 300

–IC = 500mA; –VCE = 10V

hFE

>30

CMBT2907

CMBT2907A

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