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CMBT2907 Scheda tecnica(PDF) 1 Page - Continental Device India Limited |
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CMBT2907 Scheda tecnica(HTML) 1 Page - Continental Device India Limited |
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1 / 4 page ![]() Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F ABSOLUTE MAXIMUM RATINGS CMBT2907 CMBT2907A Collector–base voltage (open emitter) –VCB0 max. 60 60 V Collector–emitter voltage (open base) –VCE0 max. 40 60 V Emitter–base voltage (open collector) –VEB0 max. 5,0 V Collector current (d.c.) –I C max. 600 mA Total power dissipation up to Tamb = 25 °CPtot max. 250 mW Junction temperature Tj max. 150 ° C D.C. current gain –IC = 500mA; –VCE = 10V hFE >30 50 Turn–off switching time —ICon = 150 mA; –IBon = IBoff = 15 mA toff < 100 ns Transition frequency at f = 100 MHz —IC = 50 mA; –VCE = 20 V fT > 200 MHz CMBT2907 CMBT2907A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Codice articolo simile - CMBT2907 |
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Descrizione simile - CMBT2907 |
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