CMBT4401 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

THERMAL RESISTANCE

From junction to ambient

Rth j–a

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter breakdown voltage

IC = 1.0 mA; IB = 0

V(BR)CEO >40 V

Collector–base breakdown voltage

IC = 100 µA; IE = 0

V(BR)CBO >60 V

Emitter–base breakdown voltage

IE = 100 µA; IC = 0

V(BR)EBO >6 V

Base cut–off current

VCE = 35 V; VEB = 0.4 V

IBEX

0.1

µA

Collector cut–off current

VCE = 35 V; VEB = 0.4 V

ICEX

0.1

µA

D.C. current gain

IC = 0.1 mA; VCE = 1 V

hFE

>20

IC = 1.0 mA; VCE = 1 V

hFE

>40

IC = 10 mA; VCE = 1 V

hFE

>80

IC = 150 mA; VCE = 1 V

hFE

100 to 300

IC = 500 mA; VCE = 2 V

hFE

>40

Saturation voltage

IC = 150 mA; IB = 15 mA

VCEsat

0.4 V

VBEsat

0.75 to 0.95 V

IC = 500 mA; IB = 50 mA

VCEsat

0.75 V

VBEsat

1.2 V

Transition frequency

f = 100 MHz; IC = 20 mA; VCE = 10 V

250 MHz

Collector–base capacitance

IE = 0; VCB = 5 V; f = 100 kHz

Ccb

<8 pF

Emitter–base capacitance

IC = 0; VBE = 0.5 V; f = 100 kHz

Ceb

<30 pF

Input impedance; f = 1 kHz;

min.

1 k

Ω

IC = 1 mA; VCE = 10 V

hie

max.

8 k

Ω

Voltage feed–back ratio

min. 0.1 × 10–4

IC = 1 mA; VCE = 10 V; f = 1 kHz

hre

max. 30 × 10–4

Small–signal curent gain; f = 1 kHz;

IC = 1 mA; VCE = 10 V

hfe

min.

max.

500

CMBT4401

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