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CMBT4401 Scheda tecnica(PDF) 1 Page - Continental Device India Limited |
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CMBT4401 Scheda tecnica(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage VCEO max. 40 V Collector current (DC) IC max. 600 mA DC current gain min. 100 IC = 150 mA; VCE = 1 V hFE max. 300 Total power dissipation up to Tamb = 25 °C Ptot max 250 mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage VCEO max. 40 V Collector–base voltage VCBO max. 60 V Emitter–base voltage VEBO max. 6 V Collector current (DC) IC max. 600 mA Total power dissipation up to Tamb = 25°C Ptot max 250 mW Storage temperature range Tstg –55 to +150 ° C Junction temperature Tj max. 150 ° C CMBT4401 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Codice articolo simile - CMBT4401 |
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Descrizione simile - CMBT4401 |
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