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2

isc N-Channel MOSFET Transistor

IRF250

·

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

200

-

-

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2

-

4

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=16A

-

-

0.085

Ω

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

-

-

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=200V; VGS=0

-

-

250

uA

VSD

Diode Forward Voltage

IS=30A; VGS=0

-

-

2.0

V

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.