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IRF250 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte IRF250
Spiegazioni elettronici  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF250 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF250
DESCRIPTION
·
Drain Current –ID=30A@ TC=25℃
·
Drain Source Voltage- VDSS= 200V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Switching power supplies
·
Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
30
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.83
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
30
℃
/W


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