ST25DV64K datasheet(66/197 Pages) STMICROELECTRONICS

66 / 197 page

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256 write occurrence have already been reached in the same sequential write.

EEPROM memory (user memory and system configuration) is internally organized in pages of 4 bytes long. Data

located in a same page all share the same most significant memory address bits b16-b2.

I2C sequential write programming time in the EEPROM memory is dependent on this internal organization: total

programming time is the I2C write time tW (as defined in Table 248. I2C AC characteristics (up to 85 °C) and

Table 249. I2C AC characteristics (up to 125 °C)) multiplied by the number of internal EEPROM pages where the

data must be programmed, including incomplete pages. For example, a 256 Bytes I2C sequential write, starting at

address 0002h will write data over 65 pages. Total write time in this case is tW x 65.

Figure 26. Write mode sequences when write is not inhibited

Byte

Write

Dev Select

Byte address Byte address

Data in

Sequential

Write

Dev Select

Byte address Byte address

Data in 1

Data in 2

Data in N

ACK

R/W

ACK

R/W

ACK

Note:

N ≤ 256

Figure 27. Write mode sequences when write is inhibited

Byte

Write

Dev select

Byte address

Data in

Sequential

Write

Dev select

Byte address

Data in 1

Data in 2

Sequential

Write(cont'd)

Data in N

ACK

NO ACK

R/W

ACK

NO ACK

R/W

NO ACK

Note:

N ≤ 256

ST25DV04K ST25DV16K ST25DV64K

I2C write operations

DS10925 - Rev 11

page 66/197

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