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STM32C011F6P3TR Scheda tecnica(PDF) 57 Page - STMicroelectronics |
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STM32C011F6P3TR Scheda tecnica(HTML) 57 Page - STMicroelectronics |
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57 / 94 page ![]() DS13866 Rev 3 57/94 STM32C011x4/x6 Electrical characteristics 79 Figure 16. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator 5.3.9 flash memory characteristics Temperature MS55839V1 Table 41. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TA = 25 °C 31.04 32 32.96 kHz VDD = 2 V to 3.6 V, TA = -40 to 125 °C 29.5 (1) -34(1) tSU(LSI)(2) LSI oscillator start-up time - - 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption - - 110 180 nA 1. Evaluated by characterization – Not tested in production. 2. Specified by design – Not tested in production. Table 42. Flash memory characteristics(1) Symbol Parameter Conditions Min Typ Max Unit tprog Word programming time 64 bits - 85.0 125.0 µs tprog_row Row (32 double word) programming time Normal programming - 2.7 4.6 ms Fast programming - 1.7 2.8 tprog_page Page (2 Kbyte) programming time Normal programming - 21.8 36.6 Fast programming - 13.7 22.4 tERASE Page (2 Kbyte) erase time - - 22.0 40.0 |
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