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MPZ2012S221A Scheda tecnica(PDF) 13 Page - STMicroelectronics |
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MPZ2012S221A Scheda tecnica(HTML) 13 Page - STMicroelectronics |
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13 / 56 page ![]() 5.1.4 Minimum on-time The current sense in the high-side MOSFET is not active (masked) for a certain time at the beginning to the on-time (masking time, from which the parameter TON MIN derives). This current sense blanking time is implemented to prevent any primary side pulsed current at the high-side turn-on (resonating with transformer leakage inductance, parasitic capacitances, reverse junction capacitance of the Schottky diode of the secondary side) from overcoming the EA programmed switch current for the conversion, which would make the conversion unstable (depicted in Figure 9). For the L6983I, the TON MIN has a typical value of 390 ns. Figure 9. Simulation with different masking times: insufficient (< 100 ns, left) and appropriate (390 ns, right) -5 -4 -3 -2 -1 0 1 2 3 4 0 10 20 30 40 50 Time [µs] -5 0 5 10 15 20 0 10 20 30 40 50 Time [µs] -5 -4 -3 -2 -1 0 1 2 3 4 0 10 20 30 40 50 Time [µs] -5 0 5 10 15 20 0 10 20 30 40 50 Time [µs] Despite the masking time, an RC snubber (for example, across the Schottky diode of the secondary side) is normally recommended to damp oscillations. Figure 10 shows how the RC snubber helps in smothering the remaining oscillations. Figure 10. Remaining oscillations (left) and their filtering with RC snubber (right) VIN = 12 V, N = 6, IOUTiso = 200 mA L6983I Primary side DS14040 - Rev 1 page 13/56 |
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