Notes:

a. Pulse test: PW

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 1 mA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

µA

VDS = 60 V, VGS = 0 V, TJ = 70 °C

75

On-State Drain Currenta

ID(on)

VDS 15 V, VGS = 10 V

2.5

A

Drain-Source On-Resistancea

RDS(on)

VGS = 10 V, ID = 0.5 A

0.91



Forward Transconductancea

gfs

VDS = 15 V, ID = 0.5 A

4

S

Diode Forward Voltage

VSD

IS = 1 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 30 V, VGS = 10 V, ID = 0.5 A

3

nC

Gate-Source Charge

Qgs

0.37

Gate-Drain Charge

Qgd

1.45

Gate Resistance

Rg

0.5

1.3

2.4



Switching

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 33 

ID  0.2 A, VGEN = 10 V, Rg = 6 

711

ns

Rise Time

tr

10

15

Turn-Off Delay Time

td(off)

915

Fall Time

tf

11

15

Source-Drain Reverse Recovery Time

trr

IF = 0.5 A, dI/dt = 100 A/µs50100

Output Characteristics

0

1

2

3

4

02468

10

VGS = 10 V, 9 V, 8 V

4 V

VDS - Drain-to-Source Voltage (V)

3 V

5 V

2 V, 1 V

Transfer Characteristics

0

1

2

3

4

02

46

8

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

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