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VB162KX Scheda tecnica(PDF) 3 Page - VBsemi Electronics Co.,Ltd

Il numero della parte VB162KX
Spiegazioni elettronici  N-Channel 60 V(D-S) MOSFET
PDF  7 Pages
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Produttore elettronici  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

VB162KX Scheda tecnica(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  VB162KX Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd VB162KX Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd VB162KX Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd VB162KX Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd VB162KX Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd VB162KX Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd VB162KX Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
03
69
12
ID - Drain Current (A)
VGS = 10 V
0
4
8
12
16
20
0123456
VDS = 50 V
ID = 0.5 A
Qg - Total Gate Charge (nC)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
1
0.01
VSD - Source-to-Drain Voltage (V)
0.1
TJ = 150 °C
TJ = 25 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
0
VDS - Drain-to-Source Voltage (V)
Crss
Coss
Ciss
0.0
0.5
1.0
1.5
2.0
2.5
- 50
- 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 0.5 A
TJ - Junction Temperature (°C)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
02468
10
ID = 0.5 A
VGS - Gate-to-Source Voltage (V)
www.VBsemi.com
VB162KX
3
40
80
120
160
200
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