2372 datasheet(4/10 Pages) RENESAS

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Data Sheet D13192EJ3V0DS

2SK2371, 2372

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Drain to Source On-Resistance

RDS (on)

0.20

0.25

VGS = 10 V

2SK2371

0.23

0.27

ID = 13 A

2SK2372

Gate to Source Cutoff Voltage

VGS (off)

2.5

3.0

3.5

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs |

8.0

VDS = 10 V, ID = 13 A

Drain Leakage Current

IDSS

100

µA

VDS = VDSS, VGS = 0

Gate to Source Leakage Current

IGSS

±100

VGS =

±30 V, VDS = 0

Input Capacitance

Ciss

3600

VDS = 10 V

Output Capacitance

Coss

700

VGS = 0

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-On Delay Time

td (on)

ID = 13 A

Rise Time

VGS = 10 V

Turn-Off Delay Time

td (off)

160

VDD = 150 V

Fall Time

RG = 10

Total Gate Charge

ID = 25 A

Gate to Source Charge

QGS

VDD = 400 V

Gate to Drain Charge

QGD

VGS = 10 V

Body Diode Forward Voltage

VF (S-D)

1.0

IF = 25 A, VGS = 0

Reverse Recovery Time

trr

500

IF = 25 A, VGS = 0

Reverse Recovery Charge

Qrr

4.5

µC

di/dt = 50 A/

µs

VGS = 20-0 V

PG.

RG = 25

D.U.T.

VDD

PG.

RG = 10

D.U.T.

VDD

PG.

IG = 2 mA

D.U.T.

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

t = 1US

Duty Cycle

≤ 1%

VGS

Wave

Form

Wave

Form

VGS

10 %

90 %

10 %

VGS (on)

ton

toff

td (on)

td (off)

Test Circuit 3 Gate Charge

Test Circuit 1 Avalanche Capability

Test Circuit 2 Switching Time

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