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2372 Scheda tecnica(PDF) 7 Page - Renesas Technology Corp |
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2372 Scheda tecnica(HTML) 7 Page - Renesas Technology Corp |
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7 / 10 page ![]() Data Sheet D13192EJ3V0DS 5 2SK2371, 2372 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Qg - Gate Charge (nC) Tch - Channel Temperature - (C) REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT IF - Forward Current - (A) DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - (V) 1.5 100 10 1.0 0.1 0.01 1.0 0.5 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - (V) 1.0 10 100 1000 ID - Drain Current - (A) 100 0.1 10 1.0 SWITCHING CHARACTERISTICS –50 0 50 100 150 1.0 0.5 0 ID = 25 A 13 A VGS = 10 V VGS = 0 V Pulsed 1000 10000 1 000 100 10 1.0 0.1 1.0 10 100 Ciss Coss Crss tr VDD = 150 V VGS = 10 V Rin = 10 Ω 1.0 10 100 600 500 400 300 200 100 0.1 di/dt = 50 A/ s VGS = 0 020 80 40 120 500 400 300 200 100 20 18 16 14 12 10 8 6 4 2 0 60 100 VGS VDS VDD = 400 V 250 V 125 V tf td (off) td (on) VGS = 0 V f = 1 MHz μ |
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