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BLF348 Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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BLF348 Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() October 1992 5 Philips Semiconductors Product specification VHF linear push-pull power MOS transistor BLF348 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values per section. ID = 8 A; VGS = 10 V. handbook, halfpage 0 50 100 150 200 150 100 50 MGP231 Tj (°C) RDSon (m Ω) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 010 20 40 1500 500 0 1000 MGP234 30 C (pF) VDS (V) Cis Cos Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. VGS = 0; f = 1 MHz. handbook, halfpage 010 20 40 600 200 0 400 MGP232 30 Crs (pF) VDS (V) Fig.9 Intermodulation distortion as a function of peak synchronized output power. handbook, halfpage 50 30 10 70 −50 −55 −65 −70 −60 MGP233 90 dim (dB) Po sync (W) Th = 70 °C 25 °C |
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