BLF348 datasheet(3/12 Pages) PHILIPS

3 / 12 page

October 1992

Philips Semiconductors

Product speciﬁcation

VHF linear push-pull power MOS transistor

BLF348

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise speciﬁed.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDSS

drain-source voltage

−

±V

GSS

gate-source voltage

−

DC drain current

−

Ptot

total power dissipation

up to Tmb = 25 °C; total device;

both sections equally loaded

−

500

Tstg

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL

RESISTANCE

Rth j-mb

thermal resistance from junction to

mounting base

total device;

both sections equally loaded

0.35 K/W

Rth mb-h

thermal resistance from mounting

base to heatsink

total device;

both sections equally loaded

0.15 K/W

Fig.2 DC SOAR.

(1) Current is this area may be limited by RDS(on).

(2) Tmb =25 °C.

Total device; both sections equally loaded.

handbook, halfpage

102

110

VDS (V)

(A)

102

(1)

MRA933

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

160

500

400

MGE616

120

300

200

100

Ptot

(W)

Th (°C)

(2)

(1)

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