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FQB19N20 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte FQB19N20
Spiegazioni elettronici  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FQB19N20 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
FQB19N20
FEATURES
·
Drain Current –ID=19.4A@ TC=25℃
·
Drain Source Voltage-
: VDSS=200V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)@VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
19.4
A
IDM
Drain Current-Single Pluse
78
A
PD
Total Dissipation @TC=25℃
140
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.89
℃
/W


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