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BYV79EB Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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BYV79EB Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
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1 / 7 page ![]() Philips Semiconductors Product specification Rectifier diodes BYV79EB series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.9 V • Reverse surge capability • High thermal cycling performance I F(AV) = 14 A • Low thermal resistance I RRM = 0.2 A t rr ≤ 30 ns GENERAL DESCRIPTION PINNING SOT404 Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 no connection power supplies. 2 cathode 1 The BYV79EB series is supplied in the surface mounting SOT404 3 anode package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV79EB -150 -200 V RRM Peak repetitive reverse voltage - 150 200 V V RWM Crest working reverse voltage - 150 200 V V R Continuous reverse voltage T mb ≤ 145˚C - 150 200 V I F(AV) Average rectified forward square wave - 14 A current 2 δ = 0.5; T mb ≤ 120 ˚C I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 28 A per diode T mb ≤ 120 ˚C I FSM Non-repetitive peak forward t = 10 ms - 150 A current t = 8.3 ms - 160 A sinusoidal; with reapplied V RRM(max) I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 0.2 A I RSM Non-repetitive peak reverse t p = 100 µs - 0.2 A current T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 1. It is not possible to make connection to pin 2 of the SOT404 package 2. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω k a tab 3 13 tab 2 July 1998 1 Rev 1.100 |
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