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BYV79EB Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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BYV79EB Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page ![]() Philips Semiconductors Product specification Rectifier diodes BYV79EB series ultrafast, rugged Fig.7. Maximum t rr at Tj = 25 ˚C. Fig.8. Maximum I rrm at Tj = 25 ˚C. Fig.9. Typical and maximum forward characteristic I F = f(VF); parameter Tj Fig.10. Maximum Q s at Tj = 25 ˚C. Fig.11. Transient thermal impedance; Z th j-mb = f(tp). 1 10 trr / ns 1 10 100 1000 dIF/dt (A/us) IF=1A IF=10A 100 1.0 10 100 Qs / nC 1.0 10 100 -dIF/dt (A/us) 1000 IF=10A 5A 2A 10 1 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=10A IF=2A 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 BYV79E pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T T P t D 0 2 60 50 40 30 20 10 0 max typ Tj = 150 C Tj = 25 C 1.0 0.5 IF / A VF / V 1.5 July 1998 4 Rev 1.100 |
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