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HMC8414ACPZN-R7 Scheda tecnica(PDF) 6 Page - Analog Devices

Il numero della parte HMC8414ACPZN-R7
Spiegazioni elettronici  Low Noise Amplifier with Bypass Switch 0.1 GHz to 10 GHz
PDF  34 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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HMC8414ACPZN-R7 Scheda tecnica(HTML) 6 Page - Analog Devices

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Data Sheet
HMC8414
ABSOLUTE MAXIMUM RATINGS
analog.com
Rev. 0 | 6 of 34
Table 6.
Parameter
Rating
VDD
7 V
VCTRL
7 V
Continuous RF Input Power (RFIN) LNA Mode
23 dBm
Continuous RFIN Bypass Switch Mode
32 dBm
Continuous Power Dissipation (PDISS ), T = 85°C
(Derate 1.48 mW/°C Above 85°C)
1.25 W
Temperature
Storage Range
−65°C to +150°C
Operating Range
−40°C to +85°C
Nominal Temperature (TA = 85°C, VDD = 5 V, IDQ =
90 mA, Input Power (PIN) = Off)
121°C
Maximum Junction
175°C
Stresses at or above those listed under Absolute Maximum Ratings
may cause permanent damage to the product. This is a stress
rating only; functional operation of the product at these or any other
conditions above those indicated in the operational section of this
specification is not implied. Operation beyond the maximum operat-
ing conditions for extended periods may affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to PCB
thermal design is required.
θJC is the channel to case thermal resistance.
Table 7. Thermal Resistance
Package
θJC
Unit
CP-16-35
Quiescent, TCASE = 25°C
60
°C/W
Worst Case, TCASE = 85°C
72
°C/W
ELECTROSTATIC DISCHARGE (ESD) RATINGS
The following ESD information is provided for handling of ESD-sen-
sitive devices in an ESD protected area only.
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
Table 8. ESD Ratings for HMC8414
ESD Model
Withstand Threshold
(V)
Class
HBM
±750
1B
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Charged devi-
ces and circuit boards can discharge without detection. Although
this product features patented or proprietary protection circuitry,
damage may occur on devices subjected to high energy ESD.
Therefore, proper ESD precautions should be taken to avoid
performance degradation or loss of functionality.



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