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HMC8414ACPZN-R7 Scheda tecnica(PDF) 1 Page - Analog Devices

Il numero della parte HMC8414ACPZN-R7
Spiegazioni elettronici  Low Noise Amplifier with Bypass Switch 0.1 GHz to 10 GHz
PDF  34 Pages
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Produttore elettronici  AD [Analog Devices]
Homepage  http://www.analog.com
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Data Sheet
HMC8414
Low Noise Amplifier with Bypass Switch 0.1 GHz to 10 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
►
Integrated amplifier bypass switch
►
Self biased with adjustable bias current
►
Gain in amplifier path: 16 dB typical at 7 GHz to 10 GHz
►
OIP3 in amplifier path: 36.5 dBm typical at 0.1 GHz to 4 GHz
►
Noise figure in amplifier path: 2 dB typical at 0.1 GHz to 4 GHz
►
Insertion loss in bypass path: 1.5 dB typical at 0.1 GHz to 4 GHz
►
16-lead, 3 mm × 3 mm LFCSP package
APPLICATIONS
►
Test and measurement equipment
►
Wideband high dynamic range receivers
GENERAL DESCRIPTION
The HMC8414 is a low noise wideband amplifier with a bypass
switch that operates from 0.1 GHz to 10 GHz. The integrated
bypass switch enables high dynamic range systems with large
receive path signal variation. In the bypass path, typical insertion
loss and input third-order intercept (IIP3) are 1.5 dB and 49.4 dBm,
respectively.
The HMC8414 features inputs and outputs that are internally
matched to 50 Ω over the full operating range of the device. The
single positive supply voltage can range from 3 V to 6 V. The bias
current is set by a resistor connected between the RBIAS pin and
VDD pins (RFOUT/VDD1 and VDD2), and can be varied around its
nominal value of 90 mA.
The HMC8414 is fabricated on a gallium arsenide (GaAs), pseudo-
morphic high electron mobility transistor (pHEMT) process. It is
housed in an RoHS-compliant, 3 mm × 3 mm, LFCSP package and
is specified for operation from −40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
Figure 1.


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