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L033MU01RI Scheda tecnica(PDF) 54 Page - SPANSION |
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L033MU01RI Scheda tecnica(HTML) 54 Page - SPANSION |
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54 / 61 page ![]() 52 Am29LV033MU September 12, 2006 DA TA SH EET ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, Programming specification assume that all bits are programmed to 00h. 2. Maximum values are measured at V CC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000 program/erase cycles. 3. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer. 4. For 1-32 bytes programmed in a single write buffer programming operation. 5. Effective write buffer specification is calculated on a per-per-byte basis for a 32-byte write buffer operation. 6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and 13 for further information on command definitions. 8. The device has a minimum erase and program cycle endurance of 100,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except V CC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP PIN AND BGA PACKAGE CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.5 3.5 sec Excludes 00h programming prior to erasure (Note 6) Chip Erase Time 32 64 sec Single Byte Program Time (Note 3) 60 600 µs Excludes system level overhead (Note 7) Accelerated Single Byte Program Time (Note 3) 54 540 µs Total Write Buffer Program Time (Note 4) 240 1200 µs Effective Write Buffer Program Time (Note 5) 7.5 38 µs Total Accelerated Write Buffer Program Time (Note 4) 200 1040 µs Effective Accelerated Write Buffer Program Time (Note 5) 6.25 33 µs Chip Program Time 31.5 73 sec Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to V SS on all I/O pins –1.0 V V CC + 1.0 V V CC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit C IN Input Capacitance V IN = 0 TSOP 6 7.5 pF BGA 4.2 5.0 pF C OUT Output Capacitance V OUT = 0 TSOP 8.5 12 pF BGA 5.4 6.5 pF C IN2 Control Pin Capacitance V IN = 0 TSOP 7.5 9 pF BGA 3.9 4.7 pF |
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