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LEBP1MS Scheda tecnica(PDF) 4 Page - OSRAM GmbH |
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LEBP1MS Scheda tecnica(HTML) 4 Page - OSRAM GmbH |
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4 / 21 page ![]() LE B P1MS DATASHEET DATASHEET 4 | Version 0.1 | 2022-09-26 Characteristics T Board = 25 °C; IF = 4000 mA; f = 1000 Hz; D = 0.25 Parameter Symbol Values Peak Wavelength λ peak typ. 450 nm Dominant Wavelength 3) λ dom min. typ. max. 452 nm 456 nm 460 nm Spectral bandwidth at 50% I rel,max ∆λ typ. 23 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 1.95 x 1.35 mm² Partial Flux acc. CIE 127:2007 4) I F = 4000 mA Φ E/V, 120° typ. 0.77 Forward Voltage 5) I F = 4000 mA V F min. typ. max. 6.4 V 6.8 V 7.6 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint R thJS real typ. 1.30 K / W Electrical thermal resistance junction/solderpoint with efficiency η e = 31 % R thJS elec. typ. 1.0 K / W |
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