SCT855Z datasheet(4/5 Pages) SMCDIODE

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Technical Data

Data Sheet N2070, Rev.-



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SCT655Z

SCT855Z

FIG.3: Surge peak on-state current versus

number of cycles

FIG.1: Maximumpower dissipation versus RMS

on-state current

FIG.4: On-state characteristics (maximum

values)

FIG.2: RMS on-state current versus case

temperature

IT(RMS) (A)

P(w)

IT(RMS) (A)

Tc(℃)

100

125

100

1000

Number of cycles

ITSM(A)

ITM(A)

VTM(V)

Tj=25℃

160

240

320

TO-3P Ins

400

480

560

600

100

Tj=Tjmax

α=180°

One cycle

tp=10ms

FIG.6: Relative variations of gate trigger

current, holding current and latching current

versus junction temperature

FIG.5: Non-repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and

corresponging value of I t (dI/dt < 150A/μs)

tp(ms)

0.01

0.1

ITSM(A), I t (As)

-40 -20

20 40 60 80 100 120 140

IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)

0.0

0.5

1.5

2.0

3.0

1.0

2.5

Tj(℃)

1000

5000

100

dI/dt

ITSM

I t2

IH&IL

IGT

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