Technical Data

Data Sheet N2070, Rev.-



China - Germany - Korea - Singapore - United States 



http://www.smc-diodes.com - sales@ smc-diodes.com 

SCT655Z

SCT855Z

SCT655Z/855Z 55A SCRs

TO-251-4R

A(2)

K(1)

G(3)

TO-220B

Non-Insulated

TO-220A

Insulated

TO-220F

Insulated

1

1

1

1

2

2

2

2

3

3

3

3

TO-252-4R

1

3

2

TO-263

3

1

2

Circuit Diagram

Description

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Storage junction temperature range

TJ

-

-40-150



C

Operating junction temperature range

Tstg

-

-40-125



C

Repetitive peak off-state voltage(Tj=25℃)

VDRM

-

600/800

V

Repetitive peak reverse voltage(Tj=25℃)

VRRM

-

600/800

V

RMS on-state current

I(TRMS)

TO-3P Ins (TC=80℃)

55

A

Non repetitive surge peak on-state current

(tp=10ms)

ITSM

-

520

A

I2t value for fusing (tp=10ms)

I2t

-

1350

A2s

Critical rate of rise of on-state current

(IG=2×IGT)

dI/dt

-

150

A/μs

Peak gate current

IGM

-

5

A

Peak gate power

PGM

-

10

W

Average gate power dissipation (Tj=125℃)

PG(AV)

-

1

W

With high ability to withstand the shock loading of large current, SCT655/855 SCRs provide high dv/dt rate with strong

resistance to electromagnetic interference. They are especially recommended for use on solid state relay, motorcycle,

power charger, T-tools etc.

TO-3P Insulated