Silicon NPN Power Transistor

MJD243

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10mA; IB= 0

100

--

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.5 A ;IB= 50mA

--

0.3

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 1A ;IB= 0.1A

--

0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 2A ;IB= 0.2A

--

1.8

V

VBE(on)

Base-Emitter On Voltage

IC= 0.5A; VCE= 1V

--

1.5

V

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

VCB= 100V; IE= 0;TC= 125℃

--

0.1

0.1

μ

A

mA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

--

0.1

μ

A

hFE-1

DC Current Gain

IC= 0.2 A ; VCE= 1V

40

180

hFE-2

DC Current Gain

IC= 1A ; VCE= 1V

15

--

fT

Current-Gain—Bandwidth Product

IC= 0.1 A; VCE= 10V; ftest = 10MHz

40

--

MHz

COB

Collector Capacitance

IE= 0; VCB= 10V; ftest = 0.1MHz

40

--

pF

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

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