MJD243-252 datasheet(1/2 Pages) ISC

Il numero della parte	MJD243-252

Spiegazioni elettronici	Silicon NPN Power Transistor

PDF	2 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Silicon NPN Power Transistor

MJD243

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 100V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):= 0.3V(Max) @IC= 0.5A

APPLICATIONS

· Designed for low power audio amplifier and low-current,

high-speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

8

A

IB

Base Current

1

A

PC

Collector Power Dissipation

Ta=25℃

1.4

W

Collector Power Dissipation

TC=25℃

12.5

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

10

℃

/W

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